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參數(shù)資料
| 型號： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLF872 |
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BLF872_1
K
oninklijk
e
Philips
Electronics
N.V
.2006.
All
r
ights
reser
v
ed.
Pr
oduct
data
sheet
Re
v
.01
—
20
Februar
y
2006
12
of
16
Philips
Semiconductor
s
BLF872
UHF
po
wer
LDMOS
transistor
Fig 12. Component layout for class-AB broadband test circuit
001aad833
BLF872
+VG1(test)
+VD1(test)
+VG2(test)
+VD2(test)
C16
C15
C14
C13
C5
C4
C3
C6
C11
C12
C7
C1
C20
C21
C22
C23
C25
C24
C32
C27
C26
C31
C30
C29
C28
R1
R2
R6
R5
R4
R3
C2
C9
C10
C18
C8
C17
B1
L6
L4
L3
L2
L1
L5
L10
L11
L12
L13
B2
L13
L12
L2
32 mm
broadband
BLF872 input
strip
(+32 V supply)
15 mm
10 mm
3.5 mm
1.5 mm
13.1 mm
15 mm
+
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF872,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 300W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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