參數(shù)資料
型號: BLF872
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, SOT-800-1, 4 PIN
文件頁數(shù): 16/16頁
文件大小: 152K
代理商: BLF872
BLF872_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
9 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
[1]
American technical ceramics type 180R or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
[3]
American technical ceramics type 100A or capacitor of same quality.
[4]
PCB: Rogers 5880;
ε
r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m.
C15, C16
ceramic capacitor
15 nF
C17, C18
electrolytic capacitor
470
F
C20
multilayer ceramic chip capacitor
13 pF
C21
tekelec trimmer
0.6 pF to 4.5 pF
C22
multilayer ceramic chip capacitor
3.9 pF
C23
multilayer ceramic chip capacitor
10 pF
C24, C32
multilayer ceramic chip capacitor
3.0 pF
C25
multilayer ceramic chip capacitor
30 pF
C26, C27
multilayer ceramic chip capacitor
100 pF
C28, C29
ceramic capacitor
15 nF
C30, C31
electrolytic capacitor
10
F
L1
stripline
× L) 24 mm × 13.1 mm
L2
stripline
× L) 10 mm × 17.7 mm
L3
stripline
× L) 5 mm × 16.5 mm
L4
stripline
× L) 2.4 mm × 15 mm
L5
stripline
× L) 3.5 mm × 43 mm
L6
stripline
× L) 2 mm × 43.3 mm
L10
stripline
× L) 24 mm × 10 mm
L11
stripline
× L) 10 mm × 15 mm
L12
stripline
× L) 3 mm × 31.5 mm
L13
stripline
× L) 2 mm × 43.3 mm
R1
resistor
5.6
R2
resistor
5.6
R3
resistor
100
R4
resistor
100
R5
potentiometer
2 k
R6
potentiometer
2 k
Table 8:
List of components …continued
For test circuit, see Figure 10, 11 and 12.
Component
Description
Value
Remarks
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