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參數(shù)資料
| 型號(hào)： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLF872 |
BLF872_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
5 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C.
Fig 2.
CW power gain Gp, drain efciency ηD and power added efciency ηadd as a function of output power PL;
typical values
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq =2 × 0.9 A; Th = 25 °C.
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq =2 × 0.9 A; Th = 25 °C.
Fig 3.
2-tone power gain Gp and intermodulation
distortion IMD as a function of average output
power PL(AV); typical values
Fig 4.
2-tone power gain Gp, drain efciency ηD and
power added efciency
η
add as a function of
average output power PL(AV); typical values
001aad744
PL (W)
0
400
300
100
200
12
14
16
Gp
(dB)
10
60
40
20
0
ηD, ηadd
(%)
Gp
ηadd
ηD
001aad745
PL(AV) (W)
0
250
200
100
150
50
12
14
16
Gp
(dB)
10
0
20
40
60
IMD
(dBc)
IMD5
IMD3
Gp
001aad746
PL(AV) (W)
0
250
200
100
150
50
12
14
16
Gp
(dB)
10
60
40
20
0
ηD, ηadd
(%)
Gp
ηadd
ηD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF872,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 300W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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