參數(shù)資料
型號: BLF872
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, SOT-800-1, 4 PIN
文件頁數(shù): 13/16頁
文件大小: 152K
代理商: BLF872
BLF872_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
6 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
IMD at
±4.3 MHz from frequency center.
VDS = 32 V; f = 858 MHz; IDq =2 × 0.9 A; Th =25 °C.
Fig 5.
DVB-T (8K OFDM) power gain Gp and third
order intermodulation distortion
(high-frequency component IMD3HI and
low-frequency component IMD3LO) as a
function of average output power PL(AV); typical
values
Fig 6.
DVB-T (8K OFDM) power gain Gp, drain
efciency
η
D and power added efciency ηadd
as a function of average output power PL(AV);
typical values
001aad748
PL(AV) (W)
0
160
120
40
80
8
12
4
16
20
Gp
(dB)
0
IMD
(dBc)
10
20
30
40
50
IMD3LO
IMD3HI
Gp
001aad747
PL(AV) (W)
0
160
120
40
80
8
12
4
16
20
Gp
(dB)
0
50
ηD, ηadd
(%)
40
30
20
10
0
Gp
ηadd
ηD
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