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參數(shù)資料
| 型號(hào)： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 152K |
| 代理商： | BLF872 |
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BLF872_1
K
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e
Philips
Electronics
N.V
.2006.
All
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ights
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ed.
Pr
oduct
data
sheet
Re
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.01
—
20
Februar
y
2006
10
of
16
Philips
Semiconductor
s
BLF872
UHF
po
wer
LDMOS
transistor
Fig 10. Class-AB common-source broadband test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
001aad752
C28
C30
R3
R5
R1
R2
R4
R6
C25
C8
C26
L13
L6
L4
B1
L6
L12
L11
L10
L1
L5
L1
L2
L3
L10
B2
C27
C24
C23
C1
C2
C3
C4
C5
C22
C9
C10
C20
C21
C29
50
50
C31
C32
C6
C7
C11
C13
C15
C17
C12
+VG1(test)
+VG2(test)
+VD1(test)
+VD2(test)
C16
C18
C14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF872,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 300W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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