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參數(shù)資料
| 型號： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLF872 |
BLF872_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
3 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
4.
Limiting values
5.
Thermal characteristics
[1]
Th is the heatsink temperature.
[2]
Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6.
Characteristics
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
-
±13
V
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
-
200
°C
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Th =25 °C
[1] 0.32
K/W
Rth(j-h)
thermal resistance from junction to heatsink
Th =25 °C
[1] [2] 0.4
K/W
Table 6:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions [1]
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS =0V; ID =5mA
65
-
V
VGSth
gate-source threshold voltage
VDS = 20 V; ID = 250 mA
5.2
-
6.2
V
IDSS
drain leakage current
VGS =0V; VDS =32V
-
2.2
A
IDSX
drain cut-off current
VGS =VGSth + 6 V; VDS =10V
-
41
-
A
IGSS
gate leakage current
VGS =10V; VDS =0V
-
40
nA
gfs
forward transconductance
VGS =20V; ID =16A
-
10
-
S
RDSon
drain-source on-state resistance
VGS =VGSth + 6 V; ID =9A
-
80
-
m
Ciss
input capacitance
VGS = 0 V; VDS =32V; f=1MHz
[2] -
200
-
pF
Coss
output capacitance
VGS = 0 V; VDS =32V; f=1MHz
[2] -70
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS =32V; f=1MHz
[2] -
2.5
-
pF
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| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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