參數(shù)資料
型號： DK-DEV-4SGX230N
廠商： Altera
文件頁數(shù)： 58/82頁
文件大小： 0K
描述： KIT DEVELOPMENT STRATIX IV
產(chǎn)品培訓(xùn)模塊： Three Reasons to Use FPGA's in Industrial Designs
特色產(chǎn)品： Stratix? IV GX FPGA Development Kit
標(biāo)準(zhǔn)包裝： 1
系列： Stratix® IV GX
類型： FPGA
適用于相關(guān)產(chǎn)品： EP4SGX230K
所含物品： 開發(fā)板、通用電源、纜線和軟件
產(chǎn)品目錄頁面： 607 (CN2011-ZH PDF)
相關(guān)產(chǎn)品： EP4SGX230KF40C3N-ND - IC STRATIX IV FPGA 230K 1517FBGA
EP4SGX230KF40C3-ND - IC STRATIX IV FPGA 230K 1517FBGA
EP4SGX230HF35C3N-ND - IC STRATIX IV GX 230K 1152-FBGA
EP4SGX230HF35C3-ND - IC STRATIX IV GX 230K 1152-FBGA
EP4SGX230FF35C3NES-ND - IC STRATIX IV GX 230K 1152-FBGA
EP4SGX230FF35C3ES-ND - IC STRATIX IV GX 230K 1152-FBGA
EP4SGX230DF29C3NES-ND - IC STRATIX IV GX 230K 780-FBGA
EP4SGX230DF29C3ES-ND - IC STRATIX IV GX 230K 780-FBGA
其它名稱： 544-2594
Chapter 1: DC and Switching Characteristics for Stratix IV Devices
1–53
Switching Characteristics
March 2014
Altera Corporation
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Table 1–38 lists the JTAG timing parameters and values for Stratix IV devices.
Temperature Sensing Diode Specifications
Table 1–39 lists the specifications for the Stratix IV temperature sensing diode.
Table 1–40 lists the specifications for the Stratix IV internal temperature sensing diode.
Remote update only in fast AS mode
4.3
5.3
10
MHz
Note to Table 1–37:
(1) This denotes the maximum frequency supported in the FPP configuration scheme. The frequency supported for
each device may vary depending on device density. For more information, refer to the Configuration, Design
Table 1–38. JTAG Timing Parameters and Values for Stratix IV Devices
Symbol
Description
Min
Max
Unit
tJCP
TCK clock period
30
—
ns
tJCH
TCK clock high time
14
—
ns
tJCL
TCK clock low time
14
—
ns
tJPSU (TDI)
TDI JTAG port setup time
1
—
ns
tJPSU (TMS)
TMS JTAG port setup time
3
—
ns
tJPH
JTAG port hold time
5
—
ns
tJPCO
JTAG port clock to output
—
11 (1)
ns
tJPZX
JTAG port high impedance to valid output
—
14 (1)
ns
tJPXZ
JTAG port valid output to high impedance
—
14 (1)
ns
Note to Table 1–38:
(1) A 1 ns adder is required for each VCCIO voltage step down from 3.0 V. For example, tJPCO = 12 ns if VCCIO of the TDO
I/O bank = 2.5 V, or 13 ns if it equals 1.8 V.
Table 1–39. External Temperature Sensing Diode Specifications for Stratix IV Devices
Description
Min
Typ
Max
Unit
Ibias, diode source current
8
—
500
A
Vbias, voltage across diode
0.3
—
0.9
V
Series resistance
—
< 5
Diode ideality factor
1.026
1.028
1.030
—
Table 1–37. Configuration Mode Specifications for Stratix IV Devices
Programming Mode
DCLK FMAX
Unit
Min
Typ
Max
Table 1–40. Internal Temperature Sensing Diode Specifications for Stratix IV Devices
Temperature
Range
Accuracy
Offset Calibrated
Option
Sampling Rate
Conversion
Time
Resolution
Minimum Resolution
with No Missing Codes
–40 to 100 °C
±8 °C
No
Frequency:
500 kHz, 1 MHz
< 100 ms
8 bits
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