參數(shù)資料
型號： HYB 39S256400AT
廠商： SIEMENS AG
英文描述： 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM)
中文描述： 256兆位（4banks × 16兆× 4）同步DRAM（256M（4列× 1,600位× 4）同步動態(tài)RAM）的
文件頁數(shù)： 15/42頁
文件大小： 282K
代理商： HYB 39S256400AT
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Data Book
15
1.00
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data out Current (short circuit) ............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
3
–
0.4
V
μ
A
3
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
相關(guān)PDF資料
PDF描述
HYB 39S256800AT 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動態(tài)RAM)
HYB 39S256160AT 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM)
HYB 39S256400CT 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM)
HYB 39S256800CT 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動態(tài)RAM)
HYB 39S256160CT 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S256400AT-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400AT-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400AT-8A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400AT-8B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400CT-7.5 制造商:Infineon Technologies AG 功能描述:64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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