參數(shù)資料
型號(hào): LAMXO640E-3TN144E
廠商: Lattice Semiconductor Corporation
文件頁(yè)數(shù): 35/77頁(yè)
文件大?。?/td> 0K
描述: IC FPGA 640LUTS 144TQFP
標(biāo)準(zhǔn)包裝: 60
系列: LA-MachXO
可編程類(lèi)型: 系統(tǒng)內(nèi)可編程
最大延遲時(shí)間 tpd(1): 4.9ns
電壓電源 - 內(nèi)部: 1.14 V ~ 1.26 V
宏單元數(shù): 320
輸入/輸出數(shù): 113
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 144-LQFP
供應(yīng)商設(shè)備封裝: 144-TQFP(20x20)
包裝: 托盤(pán)
3-14
DC and Switching Characteristics
Lattice Semiconductor
LA-MachXO Automotive Family Data Sheet
LA-MachXO Internal Timing Parameters
1
Over Recommended Operating Conditions
Parameter
Description
-3
Units
Min.
Max.
PFU/PFF Logic Mode Timing
tLUT4_PFU
LUT4 delay (A to D inputs to F output)
0.39
ns
tLUT6_PFU
LUT6 delay (A to D inputs to OFX output)
0.62
ns
tLSR_PFU
Set/Reset to output of PFU
1.26
ns
tSUM_PFU
Clock to Mux (M0,M1) input setup time
0.15
ns
tHM_PFU
Clock to Mux (M0,M1) input hold time
-0.07
ns
tSUD_PFU
Clock to D input setup time
0.18
ns
tHD_PFU
Clock to D input hold time
-0.04
ns
tCK2Q_PFU
Clock to Q delay, D-type register conguration
0.56
ns
tLE2Q_PFU
Clock to Q delay latch conguration
0.74
ns
tLD2Q_PFU
D to Q throughput delay when latch is enabled
0.77
ns
PFU Dual Port Memory Mode Timing
tCORAM_PFU
Clock to Output
0.56
ns
tSUDATA_PFU Data Setup Time
-0.25
ns
tHDATA_PFU
Data Hold Time
0.39
ns
tSUADDR_PFU Address Setup Time
-0.65
ns
tHADDR_PFU
Address Hold Time
0.99
ns
tSUWREN_PFU Write/Read Enable Setup Time
-0.30
ns
tHWREN_PFU Write/Read Enable Hold Time
0.47
ns
PIO Input/Output Buffer Timing
tIN_PIO
Input Buffer Delay
1.06
ns
tOUT_PIO
Output Buffer Delay
1.80
ns
EBR Timing (1200 and 2280 Devices Only)
tCO_EBR
Clock to output from Address or Data with no output
register
3.14
ns
tCOO_EBR
Clock to output from EBR output Register
0.75
ns
tSUDATA_EBR Setup Data to EBR Memory
-0.37
ns
tHDATA_EBR
Hold Data to EBR Memory
0.57
ns
tSUADDR_EBR Setup Address to EBR Memory
-0.37
ns
tHADDR_EBR
Hold Address to EBR Memory
0.57
ns
tSUWREN_EBR Setup Write/Read Enable to EBR Memory
-0.23
ns
tHWREN_EBR Hold Write/Read Enable to EBR Memory
0.36
ns
tSUCE_EBR
Clock Enable Setup Time to EBR Output Register
0.27
ns
tHCE_EBR
Clock Enable Hold Time to EBR Output Register
-0.18
ns
tRSTO_EBR
Reset To Output Delay Time from EBR Output Regis-
ter
1.44
ns
PLL Parameters (1200 and 2280 Devices Only)
tRSTREC
Reset Recovery to Rising Clock
1.00
ns
tRSTSU
Reset Signal Setup Time
1.00
ns
1. Internal parameters are characterized but not tested on every device.
Rev. A 0.19
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