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參數(shù)資料
| 型號： | M58MR032C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 10/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032C |
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M58MR032C, M58MR032D
10/52
Reset/Power-down.
The memory is in Power-
down when the Read Configuration Register is set
for Power-down and RP is at V
IL
. The power con-
sumption is reduced to the Power-down level, and
Outputs are in high impedance, independent of the
Chip Enable E, Output Enable G or Write Enable
W inputs. The memory is in reset when the Read
Configuration Register is set for Reset and RP is
at VIL. The power consumption is the same of the
standby and the outputs are in high impedance.
After a Reset/Power down the device defaults to
read array mode, the status register is set to 80h
and the read configuration register defaults to
asynchronous read.
Block Locking.
Any combination of blocks can
be temporarily protected against Program or
Erase by setting the lock register and pulling WP
to V
IL
. The following summarizes the locking oper-
ation. All blocks are protected on power-up. They
can then be unprotected or protected with the Un-
protect and Protect commands. The Lock com-
mand protects a block and prevents it from being
unlocked when WP = 0. When WP = 1, Lock is
overridden. Lock is cleared only when the device
is reset or powered-down (see Protect instruction).
Table 9. Identifier Codes
Note: 1. DRC means Die Revision Code.
CR means Read Configuration Register.
LPR means Lock Protection Register.
PR means Unique Device Number and User Programmable OTP.
Code
Address (h)
Data (h)
Manufacturer Code
Bank Address + 00
0020
Device Code
Top
Bank Address + 01
88DA
Bottom
Bank Address + 01
88DB
Block Protection
Protected and Unlocked
Bank Address + 02
0001
Unprotected and Unlocked
0000
Protected and Locked
0003
Unprotected and Locked
0002
Die Revision Code
Bank Address + 03
DRC
(1)
Read Configuration Register
Bank Address + 05
CR
(1)
Lock Protection Register
Bank Address + 80
LPR
(1)
Protection Register
Bank Address + 81
Bank Address + 88
PR
(1)
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| M58MR032C100ZC6T | 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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