參數(shù)資料
型號： M58MR032C
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 2/52頁
文件大?。?/td> 396K
代理商： M58MR032C
M58MR032C, M58MR032D
2/52
Figure 2. TFBGA Connections (Top view through package)
AI90020
VDDQ
ADQ10
ADQ11
ADQ4
ADQ5
VSS
ADQ14
ADQ15
H
ADQ9
ADQ2
ADQ3
ADQ6
ADQ7
VSS
G
A18
WP
RP
BINV
L
A20
A16
VDDQ
F
A19
VPP
W
VDD
K
WAIT
E
8
7
6
5
4
3
2
1
ADQ1
ADQ8
E
A17
ADQ0
G
10
9
ADQ13
ADQ12
VSS
VSS
D
C
B
A
DU
DU
DU
DU
12
11
DU
DU
DU
DU
14
13
NC
NC
DESCRIPTION
The M58MR032 is a 32 Mbit non-volatile Flash
memory that may be erased electrically at block
level and programmed in-system on a Word-by-
Word basis using a 1.7V to 2.0V V
DD
supply for the
circuitry. For Program and Erase operations the
necessary high voltages are generated internally.
The device supports synchronous burst read and
asynchronous read from all the blocks of the mem-
ory array; at power-up the device is configured for
page mode read. In synchronous burst mode, a
new data is output at each clock cycle for frequen-
cies up to 40MHz.
The array matrix organization allows each block to
be erased and reprogrammed without affecting
other blocks. All blocks are protected against pro-
gramming and erase at Power-up.
Blocks can be unprotected to make changes in the
application and then re-protected.
A parameter block "Security block" can be perma-
nently protected against programming and erasing
in order to increase the data security. An optional
12V V
PP
power supply is provided to speed up the
program phase at costumer production. An inter-
nal command interface (C.I.) decodes the instruc-
tions to access/modify the memory content. The
program/erase controller (P/E.C.) automatically
executes the algorithms taking care of the timings
necessary for program and erase operations. Two
status registers indicate the state of each bank.
Instructions for Read Array, Read Electronic Sig-
nature, Read Status Register, Clear Status Regis-
ter, Write Read Configuration Register, Program,
Block Erase, Bank Erase, Program Suspend, Pro-
gram Resume, Erase Suspend, Erase Resume,
Block Protect, Block Unprotect, Block Locking,
Protection Program, CFI Query, are written to the
memory through a Command Interface (C.I.) using
standard micro-processor write timings.
The memory is offered in TFBGA48, 0.5 mm ball
pitch packages and it is supplied with all the bits
erased (set to ’1’).
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參數(shù)描述
M58MR032C100ZC6T 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58MR032C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032CZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032D100ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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