- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359083 > M58MR032C (意法半導(dǎo)體) 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58MR032C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 42/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁當前第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
M58MR032C, M58MR032D
42/52
Figure 17. Double Word Program and Tetra Word Program Flowchart and Pseudo code
(1)
Note: 1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation or after
a program sequence.
2. If an error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.
3. Address 1 and address 2 must be consecutive addresses differing only for address bit A0.
4. Address, address 2, address 3 and address 4 must be consecutive addresses differing only for address bit A1-A0.
Write 55h
Command
AI90035
Start
Write Address 1
& Data 1
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
DPG instruction:
– write 30h command
– write Address 1 & Data 1 (3)
– write Address 2 & Data 2 (3)
(memory enters read status state after
the Program instruction)
do:
– read status register (E or G must be
toggled) if PES instruction given execute
suspend program loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4 = 1, Program error:
– error handler
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
If b1 = 1, Program to protected block error:
– error handler
Suspend
Suspend
Loop
NO
YES
Write Address 2
& Data 2
Write Address 3
& Data 3
Write Address 4
& Data 4
TPG instruction:
– write 55h command
– write Address 1 & Data 1 (4)
– write Address 2 & Data 2 (4)
– write Address 3 & Data 3 (4)
– write Address 4 & Data 4 (4)
(memory enters read status state after
the Program instruction)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032F-ZBF | CAP 560PF 100V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF |
| M58WR032F-ZBE | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR032C100ZC6T | 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。