參數(shù)資料
型號(hào)： M58MR032C
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 14/52頁(yè)
文件大?。?/td> 396K
代理商： M58MR032C
M58MR032C, M58MR032D
14/52
Table 12. Status Register Bits
Note:
Logic level ’1’ is V
IH
and ’0’ is V
IL
.
Mnemonic
Bit
Name
Logic
Level
Definition
Note
P/ECS
7
P/ECS
Status
1
Ready
Indicates the P/E.C. status, check during
Program or Erase, and on completion before
checking bits b4 or b5 for Program or Erase
Success.
0
Busy
ESS
6
Erase
Suspend
Status
1
Suspended
On an Erase Suspend instruction P/ECS and
ESS bits are set to ’1’. ESS bit remains ’1’ until
an Erase Resume instruction is given.
0
In Progress or
Completed
ES
5
Erase
Status
1
Erase Error
ES bit is set to ’1’ if P/E.C. has applied the
maximum number of erase pulses to the block
without achieving an erase verify.
0
Erase Success
PS
4
Program
Status
1
Program Error
PS bit set to ’1’ if the P/E.C. has failed to
program a word.
0
Program
Success
VPPS
3
V
PP
Status
1
V
PP
Invalid,
Abort
VPPS bit is set if the V
PP
voltage is below
V
PPLK
when a Program or Erase instruction is
executed. V
PP
is sampled only at the beginning
of the erase/program operation.
0
V
PP
OK
PSS
2
Program
Suspend
Status
1
Suspended
On a program Suspend instruction P/ECS and
PSS bits are set to ’1’. PSS remains ’1’ until a
Program Resume Instruction is given.
0
In Progress or
Completed
BPS
1
Block
Protection
Status
1
Program/Erase
on protected
Block, Abort
BPS bit is set to ’1’ if a Program or Erase
operation has been attempted on a protected
block.
0
No operation to
protected blocks
0
Reserved
Program (PG)
The Program instruction programs the array on a
word-by-word basis. The first command must be
given to the target block and only one partition can
be programmed at a time; the other partition must
be in one of the read modes or in the erase sus-
pended mode (see Table 8).
This instruction uses two write cycles. The first
command written is the Program Set-up command
40h (or 10h). A second write operation latches the
Address and the Data to be written and starts the
P/E.C.
Read operations in the targeted bank output the
Status Register content after the programming
has started.
The Status Register bit b7 returns ’0’ while the pro-
gramming is in progress and ’1’ when it has com-
pleted. After completion the Status register bit b4
returns ’1’ if there has been a Program Failure (see
Table 12). Status register bit b1 returns ’1’ if the
user is attempting to program a protected block.
Status Register bit b3 returns a ’1’ if V
PP
is below
V
PPLK
. Any attempt to write a ’1’ to an already pro-
grammed bit will result in a program fail (status
register bit b4 set) if V
PP
= V
PPH
and will be ig-
nored if V
PP
= V
PP1
.
Programming aborts if RP goes to V
IL
. As data in-
tegrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed. A Clear Status Register instruction
must be issued to reset b5, b4, b3 and b1 of the
Status Register.
During the execution of the program by the P/E.C.,
the bank in programming accepts only the RSR
(Read Status Register) and PES (Program/Erase
Suspend) instructions. See Figure 16 for Program
Flowchart and Pseudo Code.
相關(guān)PDF資料
PDF描述
M58WR032F-ZBF CAP 560PF 100V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF
M58WR032F-ZBE 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58MR032C100ZC6T 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58MR032C120ZC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032CZC 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032D 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR032D100ZC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*