參數(shù)資料
型號: M58MR032C
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 25/52頁
文件大小: 396K
代理商: M58MR032C
25/52
M58MR032C, M58MR032D
Table 19. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0020h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
1Dh
0017h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
0004h
Typical timeout for tetra word program = 2
n
μs
16μs
21h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
0004h
Maximum timeout for word program = 2
n
times typical
512μs
24h
0004h
Maximum timeout for tetra word = 2
n
times typical
512μs
25h
0004h
Maximum timeout per individual block erase = 2
n
times typical
16s
26h
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
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