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參數(shù)資料
| 型號： | M58MR032C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 4/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032C |
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M58MR032C, M58MR032D
4/52
The architecture includes a 128 bits Protection
register that is divided into two 64-bits segments.
In the first one is written a unique device number,
while the second one is programmable by the us-
er. The user programmable segment can be per-
manently protected programming the bit 1 of the
Protection Lock Register (see protection register
and Security Block). The parameter block (# 0) is
a security block. It can be permanently protected
by the user programming the bit 2 of the Protection
Lock Register.
Block protection against Program or Erase pro-
vides additional data security. All blocks are pro-
tected and unlocked at Power-up. Instructions are
provided to protect or un-protect any block in the
application. A second register locks the protection
status while WP is low (see Block Locking descrip-
tion).
Table 3. Bank Size and Sectorization
Bank Size
Parameter Blocks
Main Blocks
Bank A
8 Mbit
8 blocks of 4 KWord
15 blocks of 32 KWord
Bank B
24 Mbit
-
48 blocks of 32 KWord
Figure 3. Memory Map
AI90069
512 Kbit or
32 KWord
000000h
007FFFh
512 Kbit or
32 KWord
1F0000h
1F7FFFh
1F8000h
Top Boot Block
Address lines A20-A0
512 Kbit or
32 KWord
178000h
17FFFFh
180000h
Total of 48
Main Blocks
512 Kbit or
32 KWord
187FFFh
64 Kbit or
4 KWord
1FF000h
1FFFFFh
64 Kbit or
4 KWord
1F8FFFh
Total of 15
Main Blocks
Total of 8
Parameter
Blocks
Bank B
Bank A
64 Kbit or
4 KWord
000000h
000FFFh
512 Kbit or
32 KWord
078000h
07FFFFh
080000h
Bottom Boot Block
Address lines A20-A0
64 Kbit or
4 KWord
007000h
007FFFh
008000h
Total of 8
Parameter
Blocks
512 Kbit or
32 KWord
00FFFFh
512 Kbit or
32 KWord
1F8000h
1FFFFFh
512 Kbit or
32 KWord
087FFFh
Total of 15
Main Blocks
Total of 48
Main Blocks
Bank B
Bank A
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| M58WR032F-ZBE | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR032C100ZC6T | 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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