- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359083 > M58MR032C (意法半導(dǎo)體) 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58MR032C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 40/52頁 |
| 文件大?。?/td> | 396K |
| 代理商： | M58MR032C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁當(dāng)前第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
M58MR032C, M58MR032D
40/52
Figure 15. Reset and Power-up AC Waveforms
AI90033
W,
VDD, VDDQ
tPLPH
E, G
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
tVDHPH
RP
L,
Power-up
Table 31. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 100ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-up or System reset.
Table 32. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= –40 to 85°C; V
DD
= V
DDQ
= 1.7V to 2.0V, V
PP
= V
DD
unless otherwise specified)
Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or
erase should perform significantly better.
2. Excludes the time needed to execute the sequence for program instruction.
3. Same timing value if V
PP
= 12V.
Symbol
Parameter
Test Condition
Min
Unit
t
PLPH (1,2)
RP Pulse Width
100
ns
t
PHEL
t
PHLL
t
PHWL
Reset High to Device Enabled
During Program and Erase
50
μs
Other Conditions
30
ns
t
VDHPH (3)
Supply Valid to Reset High
50
μs
Parameter
Min
Max
(1)
Typ
Typical after
100k W/E Cycles
Unit
Parameter Block (4 K-Word) Erase (Preprogrammed)
2.5
0.5
1
sec
Main Block (32 K-Word) Erase (Preprogrammed)
10
1
3
sec
Bank Erase (Preprogrammed, Bank A)
4
sec
Bank Erase (Preprogrammed, Bank B)
15
sec
Chip Program
(2)
40
sec
Chip Program (DPG, V
PP
= 12V)
(2)
20
sec
Word Program
(3)
200
10
10
μs
Double Word Program
200
10
10
μs
Tetra Word Program
200
10
10
μs
Program/Erase Cycles (per Block)
100,000
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032F-ZBF | CAP 560PF 100V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF |
| M58WR032F-ZBE | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR032C100ZC6T | 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR032C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。