參數(shù)資料
型號(hào)： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 11/81頁
文件大?。?/td> 539K
代理商： M58WR064EB85ZB6T
19/81
M58WR064ET, M58WR064EB
COMMAND INTERFACE - FACTORY PROGRAM COMMANDS
The Factory Program commands are used to
speed up programming. They require VPP to be at
VPPH. Refer to Table 7, Factory Program Com-
mands, in conjunction with the following text de-
scriptions.
Double Word Program Command
The Double Word Program command improves
the programming throughput by writing a page of
two adjacent words in parallel. The two words
must differ only for the address A0.
Programming should not be attempted when VPP
is not at VPPH. The command can be executed if
VPP is below VPPH but the result is not guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
s
The first bus cycle sets up the Double Word
Program Command.
s
The second bus cycle latches the Address and
the Data of the first word to be written.
s
The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations in the bank being programmed
output the Status Register content after the pro-
gramming has started.
During Double Word Program operations the bank
being programmed will only accept the Read Ar-
ray, Read Status Register, Read Electronic Signa-
ture and Read CFI Query command, all other
commands will be ignored. Dual operations are
not supported during Double Word Program oper-
ations and it is not recommended to suspend a
Double Word Program operation. Typical Program
times are given in Table 14, Program, Erase
Times and Program/Erase Endurance Cycles.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
See Appendix C, Figure 20, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using
the
Double
Word Program
command.
Quadruple Word Program Command
The Quadruple Word Program command im-
proves the programming throughput by writing a
page of four adjacent words in parallel. The four
words must differ only for the addresses A0 and
A1.
Programming should not be attempted when VPP
is not at VPPH. The command can be executed if
VPP is below VPPH but the result is not guaranteed.
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
s
The first bus cycle sets up the Double Word
Program Command.
s
The second bus cycle latches the Address and
the Data of the first word to be written.
s
The third bus cycle latches the Address and the
Data of the second word to be written.
s
The fourth bus cycle latches the Address and
the Data of the third word to be written.
s
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the pro-
gramming has started.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
During Quadruple Word Program operations the
bank being programmed will only accept the Read
Array, Read Status Register, Read Electronic Sig-
nature and Read CFI Query command, all other
commands will be ignored.
Dual operations are not supported during Quadru-
ple Word Program operations and it is not recom-
mended to suspend a Quadruple Word Program
operation. Typical Program times are given in Ta-
ble 14, Program, Erase Times and Program/Erase
Endurance Cycles.
See Appendix C, Figure 21, Quadruple Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Quadruple Word Program
command.
Enhanced Factory Program Command
The Enhanced Factory Program command can be
used to program large streams of data within any
one block. It greatly reduces the total program-
ming time when a large number of Words are writ-
ten to a block at any one time.
The use of the Enhanced Factory Program com-
mand requires certain operating conditions.
s
VPP must be set to VPPH
s
VDD must be within operating range
s
Ambient temperature, TA must be 25°C ± 5°C
s
The targeted block must be unlocked
Dual operations are not supported during the En-
hanced Factory Program operation and the com-
mand cannot be suspended.
For optimum performance the Enhanced Factory
Program commands should be limited to a maxi-
mum of 10 program/erase cycles per block. If this
limit is exceeded the internal algorithm will contin-
ue to work properly but some degradation in per-
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