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參數(shù)資料
| 型號： | M58WR064EB85ZB6T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 61/81頁 |
| 文件大?。?/td> | 539K |
| 代理商： | M58WR064EB85ZB6T |
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M58WR064ET, M58WR064EB
64/81
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, Region 1 contains all the banks that are made up of main blocks only, Region 2 con-
tains the banks that are made up of the parameter and main blocks.
(P+34)h =6Dh
03h
(P+3C)h =75h
03h
Bank Region 2 (Erase Block Type 1): Page mode and
synchronous
mode capabilities (defined in table 10)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+35)h =6Eh
07h
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+36)h =6Fh
00h
(P+37)h =70h
02h
(P+38)h =71h
00h
(P+39)h =72h
64h
Bank Region 2 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+3A)h =73h
00h
(P+3B)h =74h
01h
Bank Region 2 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+3C)h =75h
03h
Bank Region 2 (Erase Block Type 2): Page mode and
synchronous
mode capabilities (defined in table 10)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+3D)h =76h
Feature Space definitions
(P+3E)h =77h
Reserved
M58WR064ET (top)
M58WR064EB (bottom)
Description
Offset
Data
Offset
Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR064KU70ZA6U | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| M5L28FGNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L15TGNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR064EBZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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