參數(shù)資料
型號： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 42/81頁
文件大?。?/td> 539K
代理商： M58WR064EB85ZB6T
47/81
M58WR064ET, M58WR064EB
Table 22. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
3. To be characterized.
4. Meaningful only if L is always kept low.
Symbol
Alt
Parameter
M58WR064E
Unit
70
85
100
Write
Ena
ble
Co
ntrol
led
T
imi
ngs
tAVAV
tWC
Address Valid to Next Address Valid
Min
70(3)
85
100
ns
tAVLH
Address Valid to Latch Enable High
Min
10
ns
tAVWH
(4)
tWC
Address Valid to Write Enable High
Min
45(3)
50
ns
tDVWH
tDS
Data Valid to Write Enable High
Min
45(3)
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
ns
tELQV
Chip Enable Low to Output Valid
Min
70(3)
85
100
ns
tELKV
Chip Enable High to Clock Valid
Min
9
ns
tGHWL
Output Enable High to Write Enable Low
Min
20
ns
tLHAX
Latch Enable High to Address Transition
Min
10
ns
tLLLH
Latch Enable Pulse Width
Min
10
ns
tWHAV
(4)
Write Enable High to Address Valid
Min
0
ns
tWHAX
(4)
tAH
Write Enable High to Address Transition
Min
0
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
ns
tWHEL
(2)
Write Enable High to Chip Enable Low
Min
25(3)
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
ns
tWHLL
Write Enable High to Latch Enable Low
Min
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
25
ns
tWHQV
Write Enable High to Output Valid
Min
95(3)
110
125
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45(3)
50
ns
Pr
otecti
on
T
imi
ngs
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
ns
tVPHWH
tVPS
VPP High to Write Enable High
Min
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
ns
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相關代理商/技術參數(shù)
參數(shù)描述
M58WR064EBZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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