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參數(shù)資料
| 型號： | M58WR064EB85ZB6T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 15/81頁 |
| 文件大?。?/td> | 539K |
| 代理商： | M58WR064EB85ZB6T |
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M58WR064ET, M58WR064EB
22/81
Table 7. Factory Program Commands
Note: 1. WA=Word Address in targeted bank, BKA= Bank Address, PD=Program Data, BA=Block Address.
2. WA1 is the Start Address. NOT WA1 is any address that is not in the same block as WA1.
3. Address can remain Starting Address WA1 or be incremented.
4. Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
5. Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
6. A Bus Read must be done between each Write cycle where the data is programmed or verified to read the Status Register and
check that the memory is ready to accept the next data. n = number of Words, i = number of Pages to be programmed.
7. Address is only checked for the first Word of each Page as the order to program the Words in each page is fixed so subsequent
Words in each Page can be written to any address.
Command
Phase
Cycl
es
Bus Write Operations
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Double Word Program(4)
3
BKA
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program(5)
5
BKA
56h
WA1
PD1
WA2
PD2
WA3
PD3
WA4
PD4
Enhanced
Factory
Program
(6)
Setup,
Program
2
+n
+1
BKA
30h
BA
D0h
WA1(2)
PD1
WAn(3)
PAn
NOT
WA1(2)
FFFFh
Verify, Exit
n
+1
WA1(2)
PD1
WA2(3)
PD2
WA3(3)
PD3
WAn(3)
PAn
NOT
WA1(2)
FFFFh
Quadruple
Enhanced
Factory
Program
(5,6)
Setup,
first Load
5
BKA
75h
WA1(2)
PD1
WA2(7)
PD2
WA3(7)
PD3
WA4(7)
PD4
First
Program &
Verify
Automatic
Subsequent
Loads
4
WA1i
(2)
PD1i
WA2i
(7)
PD2i
WA3i
(7)
PD3i
WA4i
(7)
PD4i
Subsequent
Program &
Verify
Automatic
Exit
1
NOT
WA1
(2)
FFFFh
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PDF描述 |
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| M58WR064KU70ZA6U | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
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| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR064EBZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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