參數(shù)資料
型號(hào)： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 14/81頁(yè)
文件大?。?/td> 539K
代理商： M58WR064EB85ZB6T
21/81
M58WR064ET, M58WR064EB
tion to initiate the load phase. After the setup
command is issued, read operations output the
Status Register data. The Read Status Register
command must not be issued as it will be
interpreted as data to program.
Load Phase. The Load Phase requires 4 cycles
to load the data (refer to Table 7, Factory Program
Commands and Figure 28, Quadruple Enhanced
Factory Program Flowchart). Once the first Word
of each Page is written it is impossible to exit the
Load phase until all four Words have been written.
Two successive steps are required to issue and
execute the Load Phase of the Quadruple En-
hanced Factory Program command.
1. Use one Bus Write operation to latch the Start
Address and the first Word of the first Page to
be programmed. For subsequent Pages the first
Word address can remain the Start Address (in
which case the next Page is programmed) or
can be any address in the same block. If any
address is given that is not in the same block as
the Start Address, the device enters the Exit
Phase. For the first Load Phase Status Register
bit SR7 should be read after the first Word has
been issued to check that the command has
been accepted (bit 7 set to ‘0’). This check is not
required for subsequent Load Phases. Status
Register bit SR0 should be read to check that
the P/E.C. is ready for the next Word.
2. Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address is only checked for the first Word of
each Page as the order of the Words to be
programmed is fixed. The Status Register bit
SR0 should be read between each Bus Write
cycle to check that the P/E.C. is ready for the
next Word.
The memory is now set to enter the Program and
Verify Phase.
Program and Verify Phase. In the Program and
Verify Phase the four Words that were loaded in
the Load Phase are programmed in the memory
array and then verified by the Program/Erase Con-
troller. If any errors are found the Program/Erase
Controller reprograms the location. During this
phase the Status Register shows that the Pro-
gram/Erase Controller is busy, Status Register bit
SR7 set to ‘0’, and that the device is not waiting for
new data, Status Register bit SR0 set to ‘1’. When
Status Register bit SR0 is set to ‘0’ the Program
and Verify phase has terminated.
Once the Verify Phase has successfully complet-
ed subsequent pages in the same block can be
loaded and programmed. The device returns to
the beginning of the Load Phase by issuing one
Bus Write operation to latch the Address and the
first of the four new Words to be programmed.
Exit Phase. Finally, after all the pages have been
programmed, write one Bus Write operation with
data FFFFh to any address outside the block con-
taining the Start Address, to terminate the Load
and Program and Verify Phases.
If the Program and Verify Phase has successfully
completed the memory returns to Read mode. If
the P/E.C. fails to program and reprogram a given
location, the error will be signaled in the Status
Register.
Status Register bit SR7 set to ‘1’ and bit 0 set to ‘0’
indicate that the device has returned to Read
mode. A full Status Register check should be done
to ensure that the block has been sucessfully pro-
grammed. See the section on the Status Register
for more details.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064EBZB 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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