參數(shù)資料
型號(hào)： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 31/81頁
文件大?。?/td> 539K
代理商： M58WR064EB85ZB6T
37/81
M58WR064ET, M58WR064EB
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 17. Capacitance
Note: Sampled only, not 100% tested.
M58WR064ET, M58WR064EB
Parameter
70
85
100
Units
Min
Max
Min
Max
Min
Max
VDD Supply Voltage
1.7
2.2
1.65
2.2
1.65
2.2
V
VDDQ Supply Voltage
1.7
3.3
1.65
3.3
1.65
3.3
V
VPP Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
V
VPP Supply Voltage (Application environment)
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (CL)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to VDDQ
V
Input and Output Timing Ref. Voltages
VDDQ/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1F
VDD
0.1F
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
68
pF
COUT
Output Capacitance
VOUT = 0V
812
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064EBZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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