參數(shù)資料
型號: MCIMX258CVM4
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 400 MHz, MICROPROCESSOR, PBGA400
封裝: 17 X 17 MM, 0.80 MM PITCH, ROHS COMPLIANT, PLASTIC, MAPBGA-400
文件頁數(shù): 69/154頁
文件大小: 1498K
代理商: MCIMX258CVM4
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Freescale Semiconductor
21
3.5.1.1
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
Table 17 shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
1.8V (
± 5%) applications.
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
wcs model, 1.65 V, and 105 °C.
3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
Table 17. Mobile DDR I/O DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Notes
High-level output voltage
Voh
IOH = –1mA
IOH = Specified
Drive
OVDD – 0.08
0.8
× OVDD
——
V
1
Low-level output voltage
Vol
IOL = 1mA
IOL = Specified
Drive
——
0.08
0.2
× OVDD
V
High-level output current
I
Ioh
Voh = 0.8
×
OVDDV
Standard Drive
High Drive
Max. Drive
–3.6
–7.2
–10.8
——
mA
Low-level output current
I
Iol
Vol = 0.2
× OVDDV
Standard Drive
High Drive
Max. Drive
3.6
7.2
10.8
——
mA
High-level DC CMOS input voltage
VIH
0.7
× OVDD
OVDD
OVDD+0.3
V
Low-level DC CMOS input voltage
VIL
–0.3
0
0.3
× OVDD
V
Differential receiver VTH+
VTH+
100
mV
Differential receiver VTH-
VTH-
–100
mV
Input current (no pull-up/down)
IIN
VI = 0
VI = OVDD
——
110
60
nA
2, 3
High-impedance I/O supply current
Icc-ovdd
VI = OVDD or 0
990
nA
2, 3
High-impedance core supply current
Icc-vddi
VI = VDD or 0
1220
nA
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