參數(shù)資料
型號(hào)： MCIMX514AJM6C
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： SPECIALTY MICROPROCESSOR CIRCUIT, PBGA529
封裝： 19 X 19 MM, 0.8 MM PITCH, ROHS COMPLIANT, BGA-529
文件頁數(shù)： 111/172頁
文件大?。?/td> 2218K
代理商： MCIMX514AJM6C
Electrical Characteristics
i.MX51A Automotive and Infotainment Applications Processors, Rev. 4
Freescale Semiconductor
43
AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed
Output Pad di/dt (Low drive)1
di/dt
—
62
30
16
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.3/0.36
0.5/0.52
0.82/0.94
—
Maximum Input Transition Times3
trm
—
5
ns
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 44. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode and
ovdd=1.65 – 1.95 V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times (High Drive)1
tpr
15pF
35pF
1.42/1.42
3.01/2.96
1.20/1.27
2.38/2.40
1.43/1.49
2.37/2.44
ns
Output Pad Transition Times (Medium Drive)1
tpr
15pF
35pF
2.05/2.04
4.50/4.42
1.67/1.71
3.48/3.52
1.82/1.87
3.16/3.28
ns
Output Pad Transition Times (Low Drive)1
tpr
15pF
35pF
4.06/3.98
8.94/8.86
3.15/3.17
6.92/6.93
2.92/ 3.02
5.69/5.96
ns
Output Pad Propagation Delay (High Drive)1
tpo
15pF
35pF
2.07/2.23
3.21/3.48
2.46/2.62
3.35/3.63
3.92/3.93
4.84/4.97
ns
Output Pad Propagation Delay (Medium Drive)1
tpo
15pF
35pF
2.53/2.74
4.26/4.58
2.83/3.04
4.12/4.49
4.32/4.35
5.55/5.76
ns
Output Pad Propagation Delay (Low Drive)1
tpo
15pF
35pF
3.93/4.23
7.38/7.91
3.89/4.21
6.43/7.01
5.37/5.51
7.45/7.94
ns
Output Pad Slew Rate (High Drive)1
tps
15pF
35pF
0.82/0.82
0.39/0.40
0.90/0.85
0.45/0.45
0.69/0.66
0.42/0.41
V/ns
Output Pad Slew Rate (Medium Drive)1
tps
15pF
35pF
0.57/0.57
0.26/0.26
0.65/0.63
0.31/0.31
0.54/0.53
0.31/0.30
V/ns
Output Pad Slew Rate (Low Drive)1
tps
15pF
35pF
0.29/0.29
0.13/0.13
0.34/0.34
0.16/0.16
0.34/0.33
0.17/0.17
V/ns
Output Pad di/dt (High Drive)1
di/dt
—
47
14
9
mA/ns
Output Pad di/dt (Medium drive)1
di/dt
—
27
9
6
mA/ns
Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode
and ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
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