參數(shù)資料
型號: MPC5606SVLU6R
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP176
封裝: 24 X 24 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, MS-026BGA, LQFP-176
文件頁數(shù): 128/136頁
文件大?。?/td> 858K
代理商: MPC5606SVLU6R
MPC5606S Microcontroller Data Sheet, Rev. 7
Freescale Semiconductor
91
3.16
Flash memory electrical characteristics
Table 46. Slow internal RC oscillator (128 kHz) electrical characteristics
Symbol
C
Parameter
Conditions1
1 V
DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 105 °C, unless otherwise specified.
Value
Unit
Min
Typ
Max
fSIRC
CC P Slow internal RC oscillator low
frequency
TA = 25 °C, trimmed
128
kHz
SR —
100
150
SIRCVAR CC C Slow internal RC oscillator variation
across temperature (TA = -40°C to
105°C) and supply with respect to fSIRC
at TA = 25 °C in high frequency
configuration
Trimmed
-10%
+10% kHz
ISIRC
CC D Slow internal RC oscillator low
frequency current
TA = 25 °C, trimmed
5
A
tSIRCSU CC C Slow internal RC oscillator start-up time TA = 25 °C, VDD = 5.0 V ± 10%
8
12
s
Table 47. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram
CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
22
50
500
s
T16kpperase
CC C 16 KB block pre-program and erase time
300
500
5000
ms
T32kpperase
CC C 32 KB block pre-program and erase time
400
600
5000
ms
T128kpperase
CC C 128 KB block pre-program and erase time
800
1300
7500
ms
Teslat
CC D Erase suspend latency
30
s
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