參數(shù)資料
型號: PSD813F
廠商: 意法半導(dǎo)體
英文描述: Flash In-System-Programmable Microcontroller Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位閃速存儲器,256K位EEPROM,16K位SRAM)
中文描述: Flash在系統(tǒng)可編程微控制器外圍設(shè)備(閃速,在系統(tǒng)可編程微控制器外圍器件,100萬位閃速存儲器,256K位的EEPROM,16K的位的SRAM)
文件頁數(shù): 32/130頁
文件大小: 650K
代理商: PSD813F
PSD813F Famly
Prelimnary
28
The
PSD813F
Functional
Blocks
(cont.)
9.1.1.8.3 Flash Erase Suspend Instruction
When a Flash Sector Erase operation is in progress, the Erase Suspend instruction will
suspend the operation by writing 0B0h to any address when an appropriate Chip Select
(FSi or CSBOOTi) is true. (See Table 9). This allows reading of data from another Flash
sector after the Erase operation has been suspended. Erase suspend is accepted only
during the Flash Sector Erase instruction execution and defaults to read array mode. An
Erase Suspend instruction executed during an Erase timeout will, in addition to suspending
the erase, terminate the time out.
The Toggle Bit DQ6 stops toggling when the PSD813F internal logic is suspended. The
toggle Bit status must be monitored at an address within the Flash sector being erased. The
Toggle Bit will stop toggling between 0.1 μs and 15 μs after the Erase Suspend instruction
has been executed. The PSD813F will then automatically be set to Read Flash Block
Memory Array mode.
If an Erase Suspend instruction was executed, the following rules apply:
Attempting to read from a Flash sector that was being erased will output invalid data.
Reading from a Flash sector that was
not
being erased is valid.
The Flash memory
cannot
be programmed, and will only respond to Erase Resume
and Reset instructions (read is an operation and is OK).
If a Reset instruction is received, data in the Flash sector that was being erased will
be invalid.
9.1.1.8.4 Flash Erase Resume Instruction
If an Erase Suspend instruction was previously executed, the erase operation may be
resumed by this instruction. The Erase Resume instruction consists of writing 030h to any
address while an appropriate Chip Select (FSi or CSBOOTi) is true. (See Table 9.)
9.1.1.9 Flash and EEPROM Memory Specific Features
9.1.1.9.1 Flash and EEPROM Sector Protect
Each Flash and EEPROM sector can be separately protected against Program and Erase
functions. Sector Protection provides additional data security because it disables all
program or erase operations. This mode can be activated through the JTAG Port or a
Device Programmer.
Sector protection can be selected for each sector using the PSDsoft Configuration program.
This will automatically protect selected sectors when the device is programmed through
the JTAG Port or a Device Programmer. Flash and EEPROM sectors can be
unprotected to allow updating of their contents using the JTAG Port or a Device
Programmer. The microcontroller can read (but cannot change) the sector protection bits.
Any attempt to program or erase a protected Flash or EEPROM sector will be ignored by
the device. The Verify operation will result in a read of the protected data. This allows a
guarantee of the retention of the Protection status.
The sector protection status can be read by the MCU through the Flash protection and
PSD/EE protection registers (CSIOP). See Table 11.
相關(guān)PDF資料
PDF描述
PSD813FH(中文) Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN(中文) Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FH Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
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