參數(shù)資料
型號(hào): W25X10BVSNIG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 1 FLASH 2.7V PROM, PDSO8
封裝: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁數(shù): 19/51頁
文件大?。?/td> 1632K
代理商: W25X10BVSNIG
W25X10BV/20BV/40BV
- 26 -
9.2.14
Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure
2). The Sector Erase instruction sequence is shown in figure 14.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 14. Sector Erase Instruction Sequence Diagram
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