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參數(shù)資料
| 型號： | W25X10BVSNIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 25/51頁 |
| 文件大小： | 1632K |
| 代理商： | W25X10BVSNIG |
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W25X10BV/20BV/40BV
Publication Release Date: July 10, 2009
- 31 -
Preliminary -- Revision A
9.2.19
Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 19. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 19. The Device ID values for the W25X10BV/20BV/40BV are listed in Manufacturer
and Device Identification table. The Device ID can be read continuously. The instruction is completed
by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 20, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 19. Release Power-down Instruction Sequence
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25X10BVZPIG | 功能描述:IC SPI FLASH 1MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W25X10CLSNIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 2.5V/3.3V 1Mbit 128K/64K x 8bit/16bit 8ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8SOIC |
| W25X10CLSNIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 1M-BIT, 4KB UNIFORM 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W25X10CLZPIG | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8WSON |
| W25X10CLZPIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8WSON |
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