- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140358 > W25X10BVSNIG (WINBOND ELECTRONICS CORP) 1M X 1 FLASH 2.7V PROM, PDSO8 PDF資料下載
參數(shù)資料
| 型號： | W25X10BVSNIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 34/51頁 |
| 文件大?。?/td> | 1632K |
| 代理商： | W25X10BVSNIG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
W25X10BV/20BV/40BV
- 4 -
1. GENERAL DESCRIPTION
The W25X10BV (1M-bit), W25X20BV (2M-bit) and the W25X40BV (4M-bit) Serial Flash memories
provides a storage solution for systems with limited space, pins and power. The 25X series offers
flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code
download applications as well as storing voice, text and data. The devices operate on a single 2.7V to
3.6V power supply with current consumption as low as 4mA active and 1A for power-down. All
devices are offered in space-saving packages.
The W25X10BV/20BV/40BV arrays are organized into 512/1,024/2,048 programmable pages of 256-
bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages
can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (block
erase) or the entire chip (chip erase). The W25X10BV/20BV/40BV has 32/64/128 erasable sectors
and 2/4/8 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25X10BV/20BV/40BV supports the standard Serial Peripheral Interface (SPI), and a high
performance dual output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO
(I/O1). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of
208MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to
those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification.
2. FEATURES
Family of Serial Flash Memories
– W25X10BV: 1M-bit/128K-byte (131,072)
– W25X20BV: 2M-bit/256K-byte (262,144)
– W25X40BV: 4M-bit/512K-byte (524,288)
– 256-bytes per programmable page
– Uniform 4KB Sectors, 32KB & 64KB Blocks
SPI with Single / Dual Outputs / Dual I/O
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
Data Transfer up to 208M-bits / second
– Clock operation to 104MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– Block Erase (32K and 64K-byte)
– Page program up to 256 bytes <1ms
– More than 100,000 erase/write cycles
– More than 20-year retention
Low Power Consumption, Wide
Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, 1A Power-down (typ)
– -40° to +85°C operating range
Space Efficient Packaging
– 8-pin SOIC 150-mil
– 8-pin SOIC 208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil
相關PDF資料 |
PDF描述 |
|---|---|
| W3EG6467S403D4SG | 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| W7NCF02GH10CSAEG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF04GH10CSAADM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF04GH10ISA3FM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF04GH10ISA9HM1G | FLASH 3.3V PROM MODULE, XMA50 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W25X10BVZPIG | 功能描述:IC SPI FLASH 1MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
| W25X10CLSNIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 2.5V/3.3V 1Mbit 128K/64K x 8bit/16bit 8ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8SOIC |
| W25X10CLSNIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 1M-BIT, 4KB UNIFORM 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W25X10CLZPIG | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8WSON |
| W25X10CLZPIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 1MBIT 104MHZ 8WSON |
發(fā)布緊急采購，3分鐘左右您將得到回復。