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參數(shù)資料
| 型號： | 28F004B3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器) |
| 中文描述： | 3伏高級啟動塊閃存（3伏，4分位高級引導(dǎo)塊閃速存儲器） |
| 文件頁數(shù)： | 13/53頁 |
| 文件大?。?/td> | 300K |
| 代理商： | 28F004B3 |
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E
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
13
PRELIMINARY
Table 2. Pin Descriptions
(Continued)
Symbol
Type
Name and Function
V
CCQ
NPUT
OUTPUT V
CC
:
Enables all outputs to be driven to 1.8 V
– 2.5 V while
the V
CC
is at 2.7 V–3.3 V. If the V
CC
is regulated to 2.7 V–2.85 V, V
CCQ
can be driven at 1.65 V–2.5 V to achieve lowest power operation (see
Section 4.4,
DC Characteristics
.
This input may be tied directly to V
CC
(2.7 V–3.6 V).
V
CC
DEVICE POWER SUPPLY:
2.7 V–3.6 V
V
PP
PROGRAM/ERASE POWER SUPPLY:
Supplies power for program
and erase operations. V
PP
may be the same as V
CC
(2.7 V–3.6 V) for
single supply voltage operation. For fast programming at manufacturing,
11.4 V–12.6 V may be supplied to V
PP
. This pin cannot be left floating.
Applying 11.4 V–12.6 V to V
PP
can only be done for a maximum of 1000
cycles on the main blocks and 2500 cycles on the parameter blocks.
V
PP
may be connected to 12 V for a total of 80 hours maximum (see
Section 3.4 for details).
V
PP
< V
PPLK
protects memory contents against inadvertent or
unintended program and erase commands.
GND
GROUND:
For all internal circuitry. All ground inputs
must
be
connected.
NC
NO CONNECT:
Pin may be driven or left floating.
2.2
Block Organization
The
asymmetrically-blocked architecture that enables
system integration of code and data within a single
flash
device.
Each
block
independently of the others up to 100,000 times.
For the address locations of each block, see the
memory maps in Appendix D.
3 Volt
Advanced
Boot
Block
is
an
can
be
erased
2.2.1
PARAMETER BLOCKS
The 3 Volt Advanced Boot Block flash memory
architecture includes parameter blocks to facilitate
storage of frequently updated small parameters
(e.g., data that would normally be stored in an
EEPROM). By using software techniques, the word-
rewrite functionality of EEPROMs can be emulated.
Each device contains eight parameter blocks of
8-Kbytes/4-Kwords (8192 bytes/4,096 words) each.
2.2.2
MAIN BLOCKS
After the parameter blocks, the remainder of the
array is divided into equal size main blocks (65,536
bytes / 32,768 words) for data or code storage. The
4-Mbit device contains seven main blocks; 8-Mbit
device contains fifteen main blocks; 16-Mbit flash
has thirty-one main blocks; 32-Mbit has sixty-three
main blocks.
3.0
PRINCIPLES OF OPERATION
Flash memory combines EEPROM functionality
with in-circuit electrical program and erase
capability. The 3 Volt Advanced Boot Block flash
memory family utilizes a Command User Interface
(CUI) and automated algorithms to simplify program
and erase operations. The CUI allows for 100%
CMOS-level control inputs and fixed power supplies
during erasure and programming.
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PDF描述 |
|---|---|
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004SC | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F008B3 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 28F008C3 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F004B5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F004BE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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