參數(shù)資料
型號(hào): 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 3伏高級(jí)啟動(dòng)塊閃存(3伏,4分位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
文件頁(yè)數(shù): 31/53頁(yè)
文件大小: 300K
代理商: 28F004B3
E
4.5
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
31
PRELIMINARY
AC Characteristics
—Read Operations
(1,4
)
(Continued)
Density
32 Mbit
Product
100 ns
110 ns
V
CC
3.0 V
–3.6 V
2.7 V–3.6V
3.0 V–3.6 V
2.7 V–3.6 V
#
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Min
Max
Unit
R1
AVAV
Read Cycle Time
90
100
100
110
ns
R2
AVQV
Address to
Output Delay
90
100
100
110
ns
R3
ELQV
CE# to Output
Delay
2
90
100
100
110
ns
R4
GLQV
OE# to Output
Delay
2
30
30
30
30
ns
R5
PHQV
RP# to Output
Delay
600
600
600
600
ns
R6
ELQX
CE# to Output in
Low Z
3
0
0
0
0
ns
R7
GLQX
OE# to Output in
Low Z
3
0
0
0
0
ns
R8
EHQZ
CE# to Output in
High Z
3
25
25
25
25
ns
R9
GHQZ
OE# to Output in
High Z
3
25
25
25
25
ns
R10
OH
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
See Figure 7 AC Waveform: Read Operations
OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 5
Input/Output Reference Waveform
for timing measurements and maximum allowable input slew rate.
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