參數(shù)資料
型號: 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏,4分位高級引導塊閃速存儲器)
文件頁數(shù): 27/53頁
文件大?。?/td> 300K
代理商: 28F004B3
E
4.4
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
27
PRELIMINARY
DC Characteristics
(1)
V
CC
2.7 V
–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V
Sym
LI
Parameter
nput Load Current
Note Typ
6
Max
±
1
Typ
Max
±
1
Typ
Max
±
1
Unit
μA
Test Conditions
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
CE# = RP# = V
CCQ
or during Program/
Erase Suspend
WP# = V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
RP# = GND ± 0.2 V
LO
Output Leakage
Current
6
±
10
±
10
±
10
μA
CCS
V
CC
Standby Current
6
18
35
20
50
150
250
μA
CCD
V
CC
Power-Down
Current
6
7
20
7
20
7
20
μA
CCR
V
CC
Read Current
4,6
10
18
8
15
9
15
mA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# =V
IL
= 5 MHz, I
OUT
=0mA
nputs = V
IL
or V
IH
RP# = GND ± 0.2 V
V
PP
V
CC
V
PP
V
CC
V
PP
> V
CC
V
PP
=V
PP1, 2, 3
Program in Progress
PPD
V
PP
Deep Power-
Down Current
0.2
5
0.2
5
0.2
5
μA
PPR
V
PP
Read Current
2
±
15
200
2
±
15
200
2
±
15
200
μA
3
50
50
50
μA
CCW+
I
PPW
V
CC
+ V
PP
Program
Current
3,6
18
55
18
55
18
55
mA
10
30
10
30
10
30
mA
V
PP
= V
PP4
Program in Progress
CCE
+
PPE
V
CC
+ V
PP
Erase
Current
3,6
20
45
21
45
21
45
mA
V
PP
= V
PP1, 2, 3
Program in Progress
16
45
16
45
16
45
mA
V
PP
= V
PP4
Program in Progress
PPES
PPWS
V
PP
Erase Suspend
Current
3
50
200
50
200
50
200
μA
V
PP
= V
PP1, 2, 3, 4
Program or Erase
Suspend in Progress
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