參數(shù)資料
型號(hào): 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 3伏高級(jí)啟動(dòng)塊閃存(3伏,4分位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
文件頁數(shù): 26/53頁
文件大?。?/td> 300K
代理商: 28F004B3
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
E
26
PRELIMINARY
4.2
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC1
V
CC
Supply Voltage
1
2.7
3.6
Volts
V
CC2
2.7
2.85
V
CC3
2.7
3.3
V
CCQ1
/O Supply Voltage
1
2.7
3.6
Volts
V
CCQ2
1.65
2.5
V
CCQ3
1.8
2.5
V
PP1
Program and Erase Voltage
1
2.7
3.6
Volts
V
PP2
2.7
2.85
V
PP3
2.7
3.3
V
PP4
2, 3
11.4
12.6
Cycling
Block Erase Cycling
3
100,000
Cycles
NOTES:
1.
2.
V
CC1
, V
CCQ1
, and V
PP3
must share the same supply when all three are between 2.7 V and 3.6 V.
During read operations or idle time, 5 V may be applied to V
PP
indefinitely. V
PP
must be at valid levels for program and
erase operations
Applying V
= 11.4 V
–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
for details.
3.
4.3
T
A
= 25 °C, f = 1 MHz
Capacitance
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
nput Capacitance
1
6
8
pF
V
IN
= 0 V
C
OUT
Output Capacitance
1
10
12
pF
V
OUT
= 0 V
NOTE:
1.
Sampled, not 100% tested.
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