參數(shù)資料
型號: 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏,4分位高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 33/53頁
文件大?。?/td> 300K
代理商: 28F004B3
E
4.6
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
33
PRELIMINARY
AC Characteristics
—Write Operations
(1,5,6)
Density
4/8/16 Mbit
Product
90
110
V
CC
3.0 V
3.6 V
2.7 V –
3.6 V
3.0 V –
3.6 V
2.7 V –
3.6 V
#
Sym
PHWL
/
PHEL
ELWL
/
WLEL
ELEH
/
WLWH
DVWH
/
DVEH
AVWH
/
AVEH
WHEH
/
EHWH
WHDX
/
EHDX
WHAX
/
EHAX
WHWL
/
EHEL
VPWH
/
VPEH
Parameter
Note
Min
Min
Min
Min
Unit
W1
RP# High Recovery to
WE# (CE#) Going Low
600
600
600
600
ns
W2
CE# (WE#) Setup to
WE# (CE#) Going Low
0
0
0
0
ns
W3
WE# (CE#) Pulse
Width
4
70
70
70
70
ns
W4
Data Setup to WE#
(CE#) Going High
2
50
50
60
60
ns
W5
Address Setup to WE#
(CE#) Going High
2
70
70
70
70
ns
W6
CE# (WE#) Hold Time
from WE# (CE#) High
0
0
0
0
ns
W7
Data Hold Time from
WE# (CE#) High
2
0
0
0
0
ns
W8
Address Hold Time
from WE# (CE#) High
2
0
0
0
0
ns
W9
WE# (CE#) Pulse
Width High
4
30
30
30
30
ns
W10
V
Setup to WE#
(CE#) Going High
3
200
200
200
200
ns
W11
QVVL
V
Hold from Valid
SRD
3
0
0
0
0
ns
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