參數(shù)資料
型號(hào)： 28F004B3
廠商： Intel Corp.
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 3伏高級(jí)啟動(dòng)塊閃存（3伏，4分位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 39/53頁(yè)
文件大小： 300K
代理商： 28F004B3
E
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
39
PRELIMINARY
Ordering Information Valid Combinations
40-Lead TSOP
48-Ball μBGA*
CSP
(1)
48-Lead TSOP
48-Ball μBGA CSP
Ext. Temp.
32 M
TE28F320B3TA100
TE28F320B3BA100
TE28F320B3TA110
TE28F320B3BA110
GT28F320B3TA100
GT28F320B3BA100
GT28F320B3TA110
GT28F320B3BA110
Ext. Temp.
16 M
TE28F016B3TA90
(3)
GT28F016B3TA90
(3)
TE28F160B3TA90
(3)
GT28F160B3TA90
(3)
TE28F016B3BA90
(3)
GT28F016B3BA90
(3)
TE28F160B3BA90
(3)
GT28F160B3BA90
(3)
TE28F016B3TA110
(3)
GT28F016B3TA110
(3)
TE28F160B3TA110
(3)
GT28F160B3TA110
(3))
TE28F016B3BA110
(3)
GT28F016B3BA110
(3))
TE28F160B3BA110
(3)
GT28F160B3BA110
(3))
Ext. Temp.
8 M
TE28F008B3TA90
(3)
GT28F008B3T90
TE28F800B3TA90
(3)
GT28F800B3T90
TE28F008B3BA90
(3)
GT28F008B3B90
TE28F800B3BA90
(3)
GT28F800B3B90
TE28F008B3TA110
(3)
GT28F008B3T110
TE28F800B3TA110
(3)
GT28F800B3T110
TE28F008B3BA110
(3)
GT28F008B3B110
TE28F800B3BA110
(3))
GT28F800B3B110
Ext. Temp
4 M
TE28F004B3T90
TE28F400B3T90
TE28F004B3B90
TE28F400B3B90
TE28F004B3T110
TE28F400B3T110
TE28F004B3B110
TE28F400B3B110
NOTES:
1.
The 48-ball μBGA package top side mark reads F160B3 [or F800B3]. This mark is identical for both x8 and x16 products.
All product shipping boxes or trays provide the correct information regarding bus architecture. However, once the devices
are removed from the shipping media, it may be difficult to differentiate based on the top side mark. The device identifier
(accessible through the Device ID command: see Section 3.2.2 for further details) enables x8 and x16 μBGA package
product differentiation.
The second line of the 48-ball μBGA package top side mark specifies assembly codes. For samples only, the first
character signifies either “E” for engineering samples or “S” for silicon daisy chain samples. All other assembly codes
without an “E” or “S” as the first character are production units.
Product can be ordered in either 0.25 μm or 0.4 μm material. The “A” before the access speed specifies 0.25 μm material.
For new designs, Intel recommends using 0.25 μm Advanced Boot Block devices.
2.
3.
4.
相關(guān)PDF資料
PDF描述
28F004S3 BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
28F004S5 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
28F004SC BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
28F008B3 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
28F008C3 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F004B5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT
28F004BE-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F004BL-B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F004BL-T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F004BV 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
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