- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371434 > 28F004B3 (Intel Corp.) 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F004B3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器) |
| 中文描述： | 3伏高級啟動塊閃存（3伏，4分位高級引導(dǎo)塊閃速存儲器） |
| 文件頁數(shù)： | 28/53頁 |
| 文件大?。?/td> | 300K |
| 代理商： | 28F004B3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
E
28
PRELIMINARY
4.4
DC Characteristics
(Continued)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Unit Test Conditions
V
IL
nput Low Voltage
–0.4
V
CC
*0.22
V
V
CCQ
+0.3V
0.1
–0.4
0.4
–0.4
0.4
V
V
IH
nput High Voltage
2.0
V
CCQ
–0.4V
0.1
V
CCQ
+0.3V
0.1
V
CCQ
–0.4V
0.1
V
CCQ
+0.3V
0.1
V
V
OL
Output Low
Voltage
–0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
OL
= 100
μ
A
V
OH
Output High
Voltage
V
CCQ
–0.1V
V
CCQ
–0.1V
V
CCQ
–0.1V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
OH
= –100
μ
A
V
PPLK
V
Lock-Out
Voltage
2
1.5
1.5
1.5
V
Complete Write
Protection
V
PP1
V
PP
during
2
2.7
3.6
V
V
PP2
Program and
2
2.7
2.85
V
V
PP3
Erase Operations
2
2.7
3.3
V
V
PP4
2,5
11.4
12.6
11.4
12.6
11.4
12.6
V
V
LKO
V
CC
Prog/Erase
Lock Voltage
1.5
1.5
1.5
V
V
LKO2
V
CCQ
Prog/Erase
Lock Voltage
1.2
1.2
1.2
V
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
, T
A
= +25 °C.
Erase and program are inhibited when V
< V
and not guaranteed outside the valid V
ranges of V
, V
PP2
, V
PP3
and V
For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
valid levels for program and erase operations.
Sampled, not 100% tested.
Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation.
Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the man blocks
and 2500 cycles on the parameter blocks. V
may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
for details. For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
must be
at valid levels for program and erase operations.
Since each column lists specifications for a different V
and V
CCQ
voltage range combination, the test conditions V
Max,
V
CCQ
Max, V
CC
Min, and V
CCQ
Min refer to the maximum or minimum V
CC
or V
CCQ
voltage listed at the top of each column.
3.
4.
5.
6.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004SC | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F008B3 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 28F008C3 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F004B5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F004BE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。