參數資料
型號: 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏,4分位高級引導塊閃速存儲器)
文件頁數: 3/53頁
文件大?。?/td> 300K
代理商: 28F004B3
E
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION..............................................7
1.1 3 Volt Advanced Boot Block Flash Memory
Enhancements ............................................7
1.2 Product Overview.........................................8
2.0 PRODUCT DESCRIPTION..............................8
2.1 Package Pinouts ..........................................8
2.2 Block Organization.....................................13
3.0 PRINCIPLES OF OPERATION .....................13
3.1 Bus Operation............................................14
3.2 Modes of Operation....................................16
3.3 Block Locking.............................................22
3.4 V
PP
Program and Erase Voltages...............22
3.5 Power Consumption...................................22
3.6 Power-Up/Down Operation.........................23
3.7 Power Supply Decoupling ..........................24
4.0 ELECTRICAL SPECIFICATIONS..................25
4.1 Absolute Maximum Ratings........................25
4.2 Operating Conditions..................................26
4.3 Capacitance...............................................26
4.4 DC Characteristics..................................... 27
4.5 AC Characteristics
—Read Operations....... 30
4.6 AC Characteristics—Write Operations....... 33
4.7 Program and Erase Timings...................... 35
5.0 RESET OPERATIONS.................................. 37
6.0 ORDERING INFORMATION......................... 38
7.0 ADDITIONAL INFORMATION...................... 40
APPENDIX A: Write State Machine Current/
Next States.................................................. 41
APPENDIX B: Access Time vs.
Capacitive Load.......................................... 42
APPENDIX C: Architecture Block Diagram ..... 43
APPENDIX D: Word-Wide Memory Map
Diagrams..................................................... 44
APPENDIX E: Byte Wide Memory Map
Diagrams..................................................... 47
APPENDIX F: Program and Erase Flowcharts 50
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