參數(shù)資料
型號: 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏,4分位高級引導塊閃速存儲器)
文件頁數(shù): 29/53頁
文件大?。?/td> 300K
代理商: 28F004B3
E
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
29
PRELIMINARY
TEST POINTS
INPUT
OUTPUT
V
CCQ
0.0
V
CCQ
2
V
CCQ
2
0580_05
NOTE:
AC test inputs are driven at V
for a logic
“1” and 0.0V for a logic “0.” Input timing begins, and output timing ends, at V
CCQ
/2.
Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are when V
CCQ
= V
CCQ
Min.
Figure 5. Input/Output Reference Waveform
C
L
Out
V
CCQ
Device
under
Test
R
1
R
2
0580_06
NOTE:
See table for component values.
Figure 6. Test Configuration
Test Configuration Component Values for Worst
Case Speed Conditions
Test Configuration
C
L
(pF)
R
1
(
)
R
2
(
)
V
CCQ1
Standard Test
50
25 K
25 K
V
CCQ2
Standard Test
50
14.5 K
14.5 K
V
CCQ3
Standard Test
50
16 K
16 K
NOTE:
C
L
includes jig capacitance.
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