參數(shù)資料
型號: 28F004B3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導(dǎo)塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏,4分位高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 34/53頁
文件大?。?/td> 300K
代理商: 28F004B3
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3
E
34
PRELIMINARY
4.6
AC Characteristics
—Write Operations
(1,5,6)
(Continued)
Density
32 Mbit
Product
100
110
V
CC
3.0V
3.6V
2.7V –
3.6V
3.0V –
3.6V
2.7V –
3.6V
#
Sym
PHWL
/
PHEL
ELWL
/
WLEL
ELEH
/
WLWH
DVWH
/
DVEH
AVWH
/
AVEH
WHEH
/
EHWH
WHDX
/
EHDX
WHAX
/
EHAX
WHWL
/
EHEL
VPWH
/
VPEH
Parameter
Note
Min
Min
Min
Min
Unit
W1
RP# High Recovery to
WE# (CE#) Going Low
600
600
600
600
ns
W2
CE# (WE#) Setup to
WE# (CE#) Going Low
0
0
0
0
ns
W3
WE# (CE#) Pulse Width
4
70
70
70
70
ns
W4
Data Setup to WE#
(CE#) Going High
2
50
50
60
60
ns
W5
Address Setup to WE#
(CE#) Going High
2
70
70
70
70
ns
W6
CE# (WE#) Hold Time
from WE# (CE#) High
0
0
0
0
ns
W7
Data Hold Time from
WE# (CE#) High
2
0
0
0
0
ns
W8
Address Hold Time from
WE# (CE#) High
2
0
0
0
0
ns
W9
WE# (CE#) Pulse Width
High
4
30
30
30
30
ns
W10
V
Setup to WE# (CE#)
Going High
3
200
200
200
200
ns
W11
QVVL
V
PP
Hold from Valid SRD
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
Read timing characteristics during program suspend and erase suspend are the same as during read-only operations.
Refer to command definition table (Table 6) for valid A
IN
or D
IN
.
Sampled, but not 100% tested.
Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width high (t
) is defined
from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low (whichever goes low first). Hence, t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
See Figure 5 Input/Output Reference Waveformfor timing measurements and maximum allowable input slew rate.
See Figure 8 AC Waveform: Program and Erase Operations
5.
6.
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