參數(shù)資料
型號(hào): AM29LV2562MH120PII
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位),3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁(yè)數(shù): 39/67頁(yè)
文件大?。?/td> 473K
代理商: AM29LV2562MH120PII
December 16, 2005
Am29LV2562M
37
D A T A S H E E T
Figure 4.
Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Write number of addresses
to program minus 1(WC)
and Sector Address
Write program buffer to
flash sector address
Write first address/data
Write to a different
sector address
FAIL or ABORT
PASS
Read DQ7 - DQ0 at
Last Loaded Address
Read DQ7 - DQ0 with
address = Last Loaded
Address
Write next address/data pair
WC = WC - 1
WC = 0
Part of “Write to Buffer”
Command Sequence
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
Abort Write to
Buffer Operation
DQ7 = Data
DQ7 = Data
DQ5 = 1
DQ1 = 1
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
Notes:
1.
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
DQ7 and DQ15 may change simultaneously with
DQ5 and DQ13. Therefore, DQ7 and DQ15
should be verified.
If this flowchart location was reached because
DQ5 and DQ13 = “1”, then the device FAILED. If
this flowchart location was reached because
DQ1= “1”, then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1 and DQ9 =1,
write the Write-Buffer-Programming-Abort-Reset
command. if DQ5 and DQ13 =1, write the Reset
command.
2.
3.
4.
See Tables
10
and
11
for command sequences
required for write buffer programming.
(Note 3)
(Note 1)
(Note 2)
相關(guān)PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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