- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366499 > AM29LV2562MH120PII (Advanced Micro Devices, Inc.) 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control PDF資料下載
參數(shù)資料
| 型號： | AM29LV2562MH120PII |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 65/67頁 |
| 文件大?。?/td> | 473K |
| 代理商： | AM29LV2562MH120PII |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁當(dāng)前第65頁第66頁第67頁
December 16, 2005
Am29LV2562M
63
D A T A S H E E T
PHYSICAL DIMENSIONS
LSC080–80-Ball Fortified Ball Grid Array
18 x 12 mm Package
3266 \ 16-038.15a
PACKAGE
LSC 080
JEDEC
N/A
D x E
18.00 mm x 12.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.60
PROFILE
A1
0.40
---
---
BALL HEIGHT
A2
1.00
---
1.11
BODY THICKNESS
D
18.00 BSC.
BODY SIZE
E
12.00 BSC.
BODY SIZE
D1
9.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
10
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
n
φ
b
eE
80
BALL COUNT
0.50
0.60
0.70
BALL DIAMETER
1.00 BSC.
BALL PITCH
eD
1.00 BSC
BALL PITCH
SD / SE
0.50 BSC.
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
NOTES:
1.
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
K
J
80X
eD
CORNER
C
0.20
(2X)
(2X)
C
0.20
E1
7
SE
B
A
D1
A
B
D
C
E
F
H
G
8
7
5
6
4
2
3
1
eE
SD
BOTTOM VIEW
6
b
0.25
C
C
0.25 M
0.10
C
C
M
A B
PIN A1
7
D
E
C
TOP VIEW
SIDE VIEW
A2
A1
A
0.20
10
INDEX MARK
CPIN A1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV256MH103RPGF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100EF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100EI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100FF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100FI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。