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參數(shù)資料
| 型號： | AM29LV2562MH120PII |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 67/67頁 |
| 文件大小： | 473K |
| 代理商： | AM29LV2562MH120PII |
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December 16, 2005
Am29LV2562M
65
D A T A S H E E T
Erase and Programming Performance
Changed typical and maximum sector erase time.
Changed typical values and entered maximum values
for chip erase time and added maximum erase time.
Replaced TBDs for all typical and maximum specifica-
tions with actual values. Added phrase “Single Double-
word/Word” to Program Time and Accelerated
Program Time parameters titles. Added Total Write
Buffer Program Time and Total Accelerated Write
Buffer Program Time parameters to table. Changed
device endurance in Note 1 to 10,000 cycles.
Changed write buffer operation size in Note 3. Note 4
now refers to write buffer programming instead of chip
programming. Deleted Note 7.
Revision B+1 (October 9, 2003)
Connection Diagrams
Reverted entire pinout to that shown in Revision A+2.
Table 1,
Device Bus Operations
Corrected requirement for ACC column from “X” to
“L/H”.
Revision B+2 (December 16, 2005)
This product has been retired and is not available for
designs. For new and current designs, S29GL512N
supersedes Am29LV2562M and is the factory-recom-
mended migration path. Please refer to the
S29GL512N Data Sheet for specifications and order-
ing information. Availability of this document is re-
tained for reference and historical purposes only.
Trademarks
Copyright 2002–2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| AM29LV256MH103RPGF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100EF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100EI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100FF | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH100FI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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