參數(shù)資料
型號: AM29LV2562MH120PII
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位),3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù): 48/67頁
文件大?。?/td> 473K
代理商: AM29LV2562MH120PII
46
Am29LV2562M
December 16, 2005
D A T A S H E E T
second status check, the last command might not
have been accepted.
Table 12 shows the status of DQ3 and DQ11 relative
to the other status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation
was aborted. Under these conditions DQ1 and DQ9
produce a “1”. The system must issue the
Write-to-Buffer-Abort-Reset command sequence to re-
turn the device to reading array data. See
Write Buffer
Programming
section for more details.
Table 12.
Write Operation Status
Notes:
1. DQ5 and DQ13 switch to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 and DQ13 for more information.
2. DQ7 and DQ15 and DQ2 and DQ10 require a valid address when reading status information. Refer to the appropriate subsection
for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 and DQ9 switch to ‘1’ when the device has aborted the write-to-buffer operation.
Status
DQ7/DQ15
(Note 2)
DQ7/DA15#
0
DQ6/DQ14
Toggle
Toggle
DQ5/
DA13
(Note 1)
0
0
DQ3/
DQ11
N/A
1
DQ2/DQ10
(Note 2)
No toggle
Toggle
DQ1/
DQ9
0
N/A
RY/BY#
0
0
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Program-Suspended
Sector
Non-Program
Suspended Sector
Erase-Suspended
Sector
Non-Erase
Suspended Sector
Erase-Suspend-Program
(Embedded Program)
Busy (Note 3)
Abort (Note 4)
Program
Suspend
Mode
Program-
Suspend
Read
Invalid (not allowed)
1
Data
1
Erase
Suspend
Mode
Erase-
Suspend
Read
1
No toggle
0
N/A
Toggle
N/A
1
Data
1
DQ7/DQ15#
Toggle
0
N/A
N/A
N/A
0
Write-to-
Buffer
DQ7/DQ15#
DQ7/DQ15#
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
0
0
相關(guān)PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述:
AM29LV256MH94REI 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays
AM29LV320DB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP
AM29LV320DB120WMI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA