參數(shù)資料
型號(hào)： AM29LV2562MH120PII
廠商： Advanced Micro Devices, Inc.
英文描述： 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門(mén)閃存記憶體與VersatileI /輸出⑩控制
文件頁(yè)數(shù)： 55/67頁(yè)
文件大?。?/td> 473K
代理商： AM29LV2562MH120PII
December 16, 2005
Am29LV2562M
53
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 doublewords/1–32 words programmed.
4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
5. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation when V
IO
≠
V
CC
Parameter
120R
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
7.5
μs
Per Doubleword
Typ
15
μs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
6.25
μs
Per Doubleword
Typ
12.5
μs
Single Doubleword/Word Program
Operation (Note 2)
Word
Typ
60
μs
Doubleword
Typ
60
μs
Accelerated Single Doubleword/Word
Programming Operation (Note 2)
Word
Typ
54
μs
Doubleword
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
相關(guān)PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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