參數(shù)資料
型號: AM29LV2562MH120PII
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位),3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù): 42/67頁
文件大?。?/td> 473K
代理商: AM29LV2562MH120PII
40
Am29LV2562M
December 16, 2005
D A T A S H E E T
The system can monitor DQ3 and DQ11 to determine
if the sector erase timer has timed out (See the section
on DQ3 and DQ11: Sector Erase Timer.). The time-out
begins from the rising edge of the final WE# pulse in
the command sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing sector. The system can de-
termine the status of the erase operation by reading
DQ7 and DQ15, DQ6 and DQ14, or DQ2 and DQ10 in
the erasing sector. Refer to the
Write Operation Status
section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure illustrates the algorithm for the erase opera-
tion. Refer to the
Erase and Program Operations
ta-
bles in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sec-
tor erase operation, including the 50 μs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a typi-
cal of 5 μs (maximum of 20 μs) to suspend the erase
operation. However, when the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ15–DQ0. The system
can use DQ7 and DQ15, or DQ6 and DQ14 and DQ2
and DQ10 together, to determine if a sector is actively
erasing or is erase-suspended. Refer to the
Write Op-
eration Status
section for information on these status
bits.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 and DQ15 or DQ6
and DQ14 status bits, just as in the standard word pro-
gram operation. Refer to the
Write Operation Status
section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode
and
Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Tables
10
and
11
for program command sequence.
2. See the section on DQ3 and DQ10 for information on
the sector erase timer.
Figure 7.
Erase Operation
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