參數(shù)資料
型號(hào)： AM29LV2562MH120PII
廠商： Advanced Micro Devices, Inc.
英文描述： 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁(yè)數(shù)： 43/67頁(yè)
文件大?。?/td> 473K
代理商： AM29LV2562MH120PII
December 16, 2005
Am29LV2562M
41
D A T A S H E E T
Command Definitions
Table 10.
Command Definitions (x32 Mode, WORD# = V
IH
)
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A23–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
DWC = Doubleword Count. Number of write buffer locations to load
minus 1.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ31–DQ16 are don’t care in command sequences,
except for RD, PD and DWC.
Unless otherwise noted, address bits A23–A11 are don’t cares.
No unlock or command cycles required when device is in read
mode.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 and/or DQ13
goes high while the device is providing status information.
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ31–DQ16 are don’t care. See the
Autoselect
Command Sequence
section for more information.
The device ID must be read in three cycles.
10. If WP# protects the highest address sector, the data is 9898h for
factory locked and 1818h for not factory locked. If WP# protects
the lowest address sector, the data is 8888h for factory locked
and 0808h for not factor locked.
4.
5.
6.
7.
8.
9.
11. The total number of cycles in the command sequence is
determined by the number of doublewords written to the write
buffer. The maximum number of cycles in the command
sequence is 21.
12. The data is 0000h for an unprotected sector and 0101h for a
protected sector.
13. Command sequence resets device for next command after
aborted write-to-buffer operation.
14. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
15. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
16. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
17. The Erase Resume command is valid only during the Erase
Suspend mode.
18. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
Data
RD
F0F0
AAAA
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
Manufacturer ID
1
1
4
A
2AA
5555
555
9090
X00
00000101
22227
E7E
Device ID (Note 9)
6
555
AAAA
2AA
5555
555
9090
X01
X0E
2222
1212
X0F
2222
0101
SecSi
TM
Sector Factory Protect
(Note 10)
Sector Group Protect Verify
(Note 12)
Enter SecSi Sector Region
Exit SecSi Sector Region
Program
Write to Buffer (Note 11)
Program Buffer to Flash
Write to Buffer Abort Reset (Note 13)
Unlock Bypass
Unlock Bypass Program (Note 14)
Unlock Bypass Reset (Note 15)
Chip Erase
Sector Erase
Program/Erase Suspend (Note 16)
Program/Erase Resume (Note 17)
CFI Query (Note 18)
4
555
AAAA
2AA
5555
555
9090
X03
(Note 10)
4
555
AAAA
2AA
5555
555
9090
(SA)X02
0000/
0101
3
4
4
3
1
3
3
2
2
6
6
1
1
1
555
555
555
555
SA
555
555
XXX
XXX
555
555
XXX
XXX
55
AAAA
AAAA
AAAA
AAAA
2929
AAAA
AAAA
A0A0
9090
AAAA
AAAA
B0B0
3030
9898
2AA
2AA
2AA
2AA
5555
5555
5555
5555
555
555
555
SA
8888
9090
A0A0
2525
XXX
PA
SA
0000
PD
DWC
PA
PD
WBL
PD
2AA
2AA
PA
XXX
2AA
2AA
5555
5555
PD
0000
5555
5555
555
555
F0F0
2020
555
555
8080
8080
555
555
AAAA
AAAA
2AA
2AA
5555
5555
555
SA
1010
3030
相關(guān)PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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