參數(shù)資料
型號(hào)： AM29LV2562MH120PII
廠商： Advanced Micro Devices, Inc.
英文描述： 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù)： 64/67頁
文件大?。?/td> 473K
代理商： AM29LV2562MH120PII
62
Am29LV2562M
December 16, 2005
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
CC
, 10,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
4. For 1–16 doublewords or 1-32 words programmed in a single write buffer programming operation.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
10 and 11 for further information on command definitions.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 5)
Chip Erase Time
256
512
sec
Single Doubleword/Word Program
Time (Note 3)
Word
60
600
μs
Excludes system level
overhead (Note 6)
Doubleword
60
600
μs
Accelerated Single Doubleword/
Word Program Time
Word
54
540
μs
Doubleword
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program
Time (Note 3)
Per Word
7.5
38
μs
Per Doubleword
15
75
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Write Buffer Accelerated
Program Time (Note 3)
Per Word
6.25
33
μs
Per Doubleword
12.5
65
μs
Chip Program Time
252
584
sec
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
BGA
TBD
TBD
pF
C
OUT
Output Capacitance
V
OUT
= 0
BGA
TBD
TBD
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
BGA
TBD
TBD
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C
10
Years
125°C
20
Years
相關(guān)PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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