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參數(shù)資料
| 型號(hào)： | AM29LV2562MH120PII |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 512兆位（16 M中的x 32-Bit/32 M中的x 16位），3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 66/67頁 |
| 文件大?。?/td> | 473K |
| 代理商： | AM29LV2562MH120PII |
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64
Am29LV2562M
December 16, 2005
D A T A S H E E T
REVISION SUMMARY
Revision A (November 19, 2002)
Initial release.
Revision A+1 (January 22, 2003)
Distinctive Characteristics
Corrected the access and page read times.
Global
Added Sector Group Protection throughout datasheet
and added Table 4.
Product Selector Guide
Added V
IO
s to table and removed Note #2. Added reg-
ulated speed option.
Connection Diagrams
In the BGA package D8 is A23 and A1 is RFU.
Ordering Information
Corrected typos in V
IO
ranges. Removed Note. Added
LSC080 package.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase
Command Sequence
Noted that the SecSi Sector, autoselect, and CFI func-
tions are unavailable when a program or erase opera-
tion is in progress.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.” Changed CFI website address.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
DC Characteristics
Changed V
IH1
and V
IH2
minimum to 1.9. Removed
typos in notes. Removed V
IL
, V
IH
, V
OL
, and V
OH
from
table and added V
IL1
, V
IH1
, V
IL2
, V
IH2
, V
OL
, V
OH1
, and
V
OH2
from the CMOS table in the Am29LV640MH/L
datasheet.
Operating Ranges
Added V
CC
voltage range.
AC Characteristics
Read-only Operations:
Added note #3.
Hardware Reset, Erase and Program Operations,
Temporary Sector Unprotect, and Alternate CE#
Controlled Erase and Program Operations
Added Note.
Revision A+2 (February 3, 2003)
Ordering Information
Corrected OPNs.
Revision B (September 17, 2003)
Global
Changed data sheet status from Advance Information
to Preliminary.
Distinctive Characteristics
Changed description of device erase cycle endurance.
Changed typical sector erase time, typical write buffer
programming time, and typical active read current
specification.
Connection Diagrams
Corrected signal name for ball D8.
Erase Suspend/Erase Resume Commands
Deleted reference to erase-suspended sector address
requirement for commands.
Tables 10 and 11, Command Definitions
Corrected addresses for Erase Suspend and Erase
Resume to “XXX” (don’t care).
DC Characteristics
Changed typical and maximum values for I
CC1
, I
CC2
,
and I
CC3
. Values for different frequencies were added
to I
CC2
and I
CC3
.
AC Characteristics
Erase and Program Operations table; Alternate CE#
Controlled Erase and Program Operations table.
Changed values for the following parameters: Write
Buffer Program Operation, Effective Write Buffer Pro-
gram Operation, Accelerated Effective Write Buffer
Program Operation, Sector Erase Operation, Single
Doubleword/Word Program Operation, Accelerated
Single Doubleword/Word Program Operation (the
phrase “Single Doubleword/Word” was added to the
last two parameter titles).
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