- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298975 > CY7C1339G-200AXCT (CYPRESS SEMICONDUCTOR CORP) 128K X 32 CACHE SRAM, 2.8 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | CY7C1339G-200AXCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 CACHE SRAM, 2.8 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 |
| 文件頁數(shù)： | 10/18頁 |
| 文件大?。?/td> | 386K |
| 代理商： | CY7C1339G-200AXCT |
CY7C1339G
Document #: 38-05520 Rev. *F
Page 18 of 18
Document History Page
Document Title: CY7C1339G 4-Mbit (128K x 32) Pipelined Sync SRAM
Document Number: 38-05520
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
224368
See ECN
RKF
New data sheet
*A
288909
See ECN
VBL
In Ordering Info section, Changed TQFP to PB-free TQFP
Added PB-free BG package
*B
332895
See ECN
SYT
Modified Address Expansion balls in the pinouts for 100 TQFP and 119 BGA
Package as per JEDEC standards and updated the Pin Definitions accordingly
Modified VOL, VOH test conditions
Replaced TBDs for
Θ
JA and ΘJC to their respective values on the Thermal Resis-
tance table
Updated the Ordering Information by shading and unshading MPNs as per
availability
*C
351194
See ECN
PCI
Updated Ordering Information Table
*D
366728
See ECN
PCI
Added VDD/VDDQ test conditions in DC Table
Modified test condition in note# 10 from VIH < VDD to VIH < VDD
*E
420883
See ECN
RXU
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table
Replaced Package Name column with Package Diagram in the Ordering Infor-
mation table
Replaced Package Diagram of 51-85050 from *A to *B
Added Automotive Range in Operating Range Table
Updated the Ordering Information
*F
480368
See ECN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND.
Updated the Ordering Information table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1347D-250BGC | 128K X 36 CACHE SRAM, 2.4 ns, PBGA119 |
| CY7C1512JV18-267BZXC | 4M X 18 QDR SRAM, 0.45 ns, PBGA165 |
| CY7C1515AV18-250BZXI | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| CY7C1522JV18-250BZI | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| CY7C1524KV18-333BZI | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1339G-200BGI | 功能描述:靜態(tài)隨機存取存儲器 128Kx32 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1339G-200BGIT | 功能描述:靜態(tài)隨機存取存儲器 128Kx32 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1339G-200BGXI | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX32 2.8NS 119BGA - Bulk |
| CY7C1339L-15ZIT | 制造商:Cypress Semiconductor 功能描述:ELECTRONIC COMPONENT |
| CY7C1339S-133AXC | 功能描述:靜態(tài)隨機存取存儲器 CY7C1339S-133AXC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。