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參數(shù)資料
| 型號： | CY7C1339G-200AXCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 CACHE SRAM, 2.8 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 |
| 文件頁數(shù)： | 18/18頁 |
| 文件大?。?/td> | 386K |
| 代理商： | CY7C1339G-200AXCT |
CY7C1339G
Document #: 38-05520 Rev. *F
Page 9 of 18
ISB3
Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz
105
mA
5-ns cycle, 200 MHz
95
mA
6-ns cycle, 166 MHz
85
mA
7.5-ns cycle, 133 MHz
75
mA
ISB4
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
All Speeds
45
mA
Capacitance[11]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 3.3V
55
pF
CCLK
Clock Input Capacitance
5
pF
CI/O
Input/Output Capacitance
5
7
pF
Thermal Resistance[11]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51
30.32
34.1
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
6.85
14.0
°C/W
AC Test Loads and Waveforms
Note:
11. Tested initially and after any design or process change that may affect these parameters.
Electrical Characteristics Over the Operating Range[9, 10] (continued)
Parameter
Description
Test Conditions
Min.
Max.
Unit
OUTPUT
R = 317
R = 351
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50
Z0 = 50
VT = 1.5V
3.3V
ALL INPUT PULSES
VDDQ
GND
90%
10%
90%
10%
≤ 1 ns
(c)
OUTPUT
R = 1667
R = 1538
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50
Z0 = 50
VT = 1.25V
2.5V
ALL INPUT PULSES
VDDQ
GND
90%
10%
90%
10%
≤ 1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
OUTPUT
R = 1667
R = 1538
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50
Z0 = 50
VT = 1.25V
2.5V
ALL INPUT PULSES
VDDQ
GND
90%
10%
90%
10%
≤ 1 ns
(c)
2.5V I/O Test Load
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1339G-200BGI | 功能描述:靜態(tài)隨機存取存儲器 128Kx32 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1339G-200BGIT | 功能描述:靜態(tài)隨機存取存儲器 128Kx32 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1339G-200BGXI | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 4MBIT 128KX32 2.8NS 119BGA - Bulk |
| CY7C1339L-15ZIT | 制造商:Cypress Semiconductor 功能描述:ELECTRONIC COMPONENT |
| CY7C1339S-133AXC | 功能描述:靜態(tài)隨機存取存儲器 CY7C1339S-133AXC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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